Micron’s 1-alpha node DRAM (dynamic random access memory) technology makes memory products extremely power efficient delivering huge performance
Micron Technology has announced the volume shipment of 1α (1-alpha) node DRAM (dynamic random access memory) products built using the world’s most advanced DRAM process technology and offering major improvements in bit density, power and performance. This milestone reinforces Micron’s competitive strength and complements its recent breakthroughs with the world’s fastest graphics memory and the first-to-ship 176-layer NAND.
Micron’s advanced memory node supports densities from 8Gb to 16Gb, offering the flexibility to sustain many of Micron’s current DDR4 and LPDDR4 products while giving Micron’s server, client, networking and embedded customers the power-efficient, reliable, extended product support they need. It also ensures better TCO (total cost of ownership) over the system life in use case scenarios such as embedded automotive solutions, industrial PCs and edge servers that typically have longer lifespans.
“This 1α node achievement confirms Micron’s excellence in DRAM and is a direct result of Micron’s relentless commitment to cutting-edge design and technology”, said Scott DeBoer, Executive Vice President, Technology & Products, Micron. “With a 40 percent improvement in memory density over our previous 1z DRAM node, this advancement will create a solid foundation for future product and memory innovation”, added DeBoer.
Sumit Sadana, Executive Vice President & Chief Business Officer, Micron, said, “Our new 1α DRAM technology will enable the industry’s lowest-power mobile DRAM as well as bring the benefits of our DRAM portfolio to data center, client, consumer, industrial and automotive customers”. “With our industry leadership in both DRAM and NAND technology, Micron is in an excellent position to leverage the growth in memory and storage, which are expected to be the fastest growing segments in the semiconductor industry over the next decade”, explained Sadana.
Micron’s 1α DRAM node would facilitate more power-efficient, reliable memory solutions and provide faster LPDDR5 operating speeds for mobile platforms that require best-in-class LPDRAM performance. Micron’s innovation brings the industry’s lowest-power mobile DRAM, with a 15 percent improvement in power savings, allowing 5G mobile users to perform more tasks on their smartphones without sacrificing battery life.
Qaisar
